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This device integrates six IGBT switches with optimized gate drive circuitry
keeping critical systems running without extended downtime or costly equipment substitutions
Designed for compatibility with standard IGBT gate driver ICs operating at ±15V gate drive voltage
Low VCE(sat) characteristics reduce conduction losses and minimize heat sink requirements in high-duty-cycle operation
2MBI200S-120-02-FUJI Desc This device integrates six IGBTThe 2MBI200S 120 02 is a high performance dual IGBT module manufactured by Fuji Electric, rated for 200 amperes and 1200 volts. Built on Fuji's proven S series IGBT technology, this module offers low collector emitter saturation voltage (VCE(sat)) and optimized switching characteristics, making it an excellent choice for high efficiency power conversion in industrial and commercial applications. The robust construction and integrated freewheeling
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